Optoelectronic devices based on hybrid semiconductor nanoparticles

主题:   Optoelectronic devices based on hybrid semiconductor nanoparticles主讲人:   Dong Ick Son地点:   延安路校区第二会议室时间:   2016-05-06 11:30:00组织单位:   纺织学院

主讲人简介:Dong Ick SonPh.D., AssociateProfessor,University of Science & Technology, South Korea

DongIck Son received the phd degree in Department of Information DisplayEngineering from Hanyang University Korea, in 2010. After that, he joined KoreaInstitute of Science and Technology (KIST) as a star post-doc during 2010-2012.He worked as a visiting researcher in Department of Physics, KU Leuven, Belgiumduring post-doc period in 2011. Since 2012, he has worked as a senior researchscientist in KIST and an Associate Professor at University of Science &Technology (UST). His main research fields are study on optical and electronicdevices (nonvolatile organic bistable memory device, light-emitting device,photodetector, and photovoltaic cell) fabricated utilizing hybridorganic/inorganic nanocomposites and study on application devices utilizinghybrid van der Waals 2D materials (including carbon nanomaterials) andinorganic nanoparticles.

内容摘要:Recently,the two-dimensional material graphene has attracted due to numerousinvestigations into its remarkable physical, chemical, and mechanicalproperties, opening up a new research area for materials science, chemistry andphysics, and including for a diverse ranging and exiting potentialapplications.

Hybrid nanostructures that combine inorganicmaterials and graphene are being developed for applications such as fuel cells,batteries, photovoltaics and sensors. However, there have never been demonstrationsof light emission from such hybrids with curved single-layer graphene. Here weemploy a simple solution method to prepare emissive hybrid quantum dotsconsisting of a ZnO core wrapped in a shell of single-layer graphene, and usethese quantum dots to make a white light-emitting diode. The intermediateconsolidated quasi-metal oxide-graphene core-shell QD is a kind of newlydeveloped material which will be appropriate for a functional layer acting asan electron transport layer with high mobility in the field of such as DSSC,photovoltaic devices, sensor, lithium ion batteries (LIBs), photodetector, fuelcells, and light emitting diode etc.

讲座语言:英语

撰写:印霞信息员:郭珊珊编辑:陈前